? semiconductor components industries, llc, 2008 september, 2008 ? rev. 3 1 publication order number: mj11021/d mj11021(pnp) mj11022 (npn) complementary darlington silicon power transistors complementary darlington silicon power t ransistors are designed for use as general purpose amplifiers, low frequency switching and motor control applications. features ? high dc current gain @ 10 adc ? h fe = 400 min (all types) ? collector ? emitter sustaining voltage v ceo(sus) = 250 vdc (min) ? mj11022, 21 ? low collector ? emitter saturation v ce(sat) = 1.0 v (typ) @ i c = 5.0 a = 1.8 v (typ) @ i c = 10 a ? 100% soa tested @ v ce = 44 v i c = 4.0 a t = 250 ms ? pb ? free packages are available* maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit collector ? emitter voltage v ceo 250 vdc collector ? base voltage v cbo 250 vdc emitter ? base voltage v ebo 50 vdc collector current ? continuous ? peak (note 1) i c 15 30 adc base current i b 0.5 adc total power dissipation @ t c = 25 c derate above 25 c p d 175 1.16 w w/ c operating and storage junction temperature range t j , t stg ? 65 to +175 ? 65 to +200 c thermal characteristics characteristic symbol max unit thermal resistance, junction ? to ? case r jc 0.86 c/w maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. pulse test: pulse width = 5 ms, duty cycle 10%. *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. to ? 204 (to ? 3) case 1 ? 07 style 1 15 ampere complementary darlington power transistors 250 volts, 175 watts http://onsemi.com device package shipping ordering information mj11021 to ? 3 100 units/tray mj11022 to ? 3 100 units/tray mj11021g to ? 3 (pb ? free) 100 units/tray mj11022g to ? 3 (pb ? free) 100 units/tray marking diagram mj1102x = device code x = 1 or 2 g= pb ? free package a = location code yy = year ww = work week mex = country of orgin mj1102xg ayyww mex collector case base 1 emitter 2 collector case base 1 emitter 2 npn pnp mj11022 mj11021 2 1
mj11021(pnp) mj11022 (npn) http://onsemi.com 2 150 figure 1. power derating t c , case temperature ( c) 50 75 100 125 200 200 50 p d , power dissipation (watts) 100 0 150 175 25 0 figure 2. switching times test circuit v2 approx +12 v v1 approx -8.0 v 0 t r , t f 10 ns duty cycle = 1.0% 25 s r b and r c varied to obtain desired current levels d 1 must be fast recovery type, e.g.: 1n5825 used above i b 100 ma msd6100 used below i b 100 ma v cc 100 v r c scope tut r b d 1 51 +4.0 v 10 k 8.0 for t d and t r , d 1 is disconnected and v2 = 0 for npn test circuit reverse diode and voltage polarities. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ? emitter sustaining voltage (note 1) (i c = 0.1 adc, i b = 0) mj11021, mj11022 v ceo(sus) 250 ? vdc collector cutoff current (v ce = 125, i b = 0) mj11021, mj11022 i ceo ? 1.0 madc collector cutoff current (v ce = rated v cb , v be(off) = 1.5 vdc) (v ce = rated v cb , v be(off) = 1.5 vdc, t j = 150 c) i cev ? ? 0.5 5.0 madc emitter cutoff current (v be = 5.0 vdc, i c = 0) i ebo ? 2.0 madc on characteristics (note 1) dc current gain (i c = 10 adc, v ce = 5.0 vdc) (i c = 15 adc, v ce = 5.0 vdc) h fe 400 100 15,000 ? ? collector ? emitter saturation voltage (i c = 10 adc, i b = 100 ma) (i c = 15 adc, i b = 150 ma) v ce(sat) ? ? 2.0 3.4 vdc base ? emitter on voltage i c = 10 a, v ce = 5.0 vdc) v be(on) ? 2.8 vdc base ? emitter saturation voltage (i c = 15 adc, i b = 150 ma) v be(sat) ? 3.8 vdc dynamic characteristics current ? gain bandwidth product (i c = 10 adc, v ce = 3.0 vdc, f = 1.0 mhz) [h fe ] 3.0 ? mhz output capacitance (v cb = 10 vdc, i e = 0, f = 0.1 mhz) mj11022 mj11021 c ob ? ? 400 600 pf small ? signal current gain (i c = 10 adc, v ce = 3.0 vdc, f = 1.0 khz) h fe 75 ? ? switching characteristics typical characteristic symbol npn pnp unit delay time (v cc = 100 v, i c = 10 a, i b = 100 ma v be(off) = 50 v) (see figure 2) t d 150 75 ns rise time t r 1.2 0.5 s storage time t s 4.4 2.7 s fall time t f 10.0 2.5 s 1. pulsed test: pulse width = 300 s, duty cycle 2%.
mj11021(pnp) mj11022 (npn) http://onsemi.com 3 t, time (ms) 1.0 0.01 0.01 0.1 r(t), effective transient thermal 1.0 1.0 100 r jc (t) = r(t) r jc r jc (t) = 0.86 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) r jc (t) p (pk) t 1 t 2 single pulse resistance (normalized) 100 0 d = 0.5 0.2 0.05 duty cycle, d = t 1 /t 2 figure 3. thermal response 0.05 0.03 0.02 0.07 0.5 0.3 0.2 0.7 0.02 0.03 0.05 0.2 0.3 0.5 2.0 3.0 5.0 200 300 500 10 20 30 50 0.1 0.02 0.01 v ce , collector-emitter voltage (volts) 5.0 10 20 200 3.0 50 100 figure 4. maximum rated forward bias safe operating area (fbsoa) 0.3 0.2 0 0.5 7.0 30 70 150 dc 0.1 ms 3.0 2.0 1.0 5.0 30 20 10 i c , collector current (amps) t j = 175 c second breakdown limit bonding wire limit thermal limitation @ t c = 25 c single pulse 0.5ms 1.0ms 5.0ms forward bias there are two limitations on the power handling ability of a transistor average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 4 is based on t j(pk) = 175 c, t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 175 c. t j(pk) may be calculated from the data in figure 3. at high case temperatures thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 20 100 140 260 0 180 220 60 v ce , collector-emitter voltage (volts) 20 0 figure 5. maximum rbsoa, reverse bias safe operating area 10 30 i c , collector current (amps) l = 200 h i c /i b1 50 t c = 25 c v be(off) 0 - 5.0 v r be = 47 duty cyle = 10% reverse bias for inductive loads, high voltage and high current must be sustained simultaneously during turn ? off, in most cases, with the base to emitter junction reverse biased. under these conditions the collector voltage must be hold to a safe level at or below a specific value of collector current. this can be accomplished by several means such as active clamping, rc snubbing, load line shaping, etc. the safe level for these devices is specified as reverse bias safe operating area and represents the voltage ? current conditions during reverse biased turn ? off. this rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. figure 5 gives rosoa characteristics.
mj11021(pnp) mj11022 (npn) http://onsemi.com 4 v ce , collector-emitter voltage (volts) v ce , collector-emitter voltage (volts) collector current (amps) 4.0 0.1 3.0 2.5 1.5 3.5 2.0 1.0 0.5 0.7 1.0 2.0 3.0 5.0 10 7.0 50 30 20 70 4.0 3.0 2.5 1.5 3.5 2.0 1.0 0.5 h fe , dc current gain i c , collector current (a) i c , collector current (a) h fe , dc current gain figure 6. dc current gain figure 7. collector saturation region i b , base current (ma) 7000 5000 10,000 0.3 0.5 1.0 20 0.2 3000 2000 1000 700 500 300 200 0.7 collector current (amps) figure 8. ?on? voltages v be(sat) @ i c /i b = 100 v ce = 5.0 vdc 100 3.0 5.0 10 7.0 15 2.0 20,000 10,000 30,000 2000 1000 700 500 300 t j = 25 c t j = 150 c t j = - 55 c 7000 5000 3000 voltage (volts) 4.0 0.5 i b , base current (ma) 500 3.0 2.5 1.5 3.5 2.0 1.0 0.5 300 200 0.7 1.0 2.0 3.0 5.0 10 7.0 50 30 20 100 70 i c = 5.0 a t j = 25 c i c = 15 a 0.2 0.3 0.5 t j = 25 c v be @ v ce = 5.0 v v ce(sat) @ i c /i b = 100 voltage (volts) pnp npn pnp npn pnp npn 0.3 0.5 1.0 20 0.2 0.7 3.0 5.0 10 7.0 15 2.0 v ce = 5.0 vdc t j = 150 c t j = 25 c t j = - 55 c i c = 10 a 4.0 0.5 500 3.0 2.5 1.5 3.5 2.0 1.0 0.5 300 200 0.7 1.0 2.0 3.0 5.0 10 7.0 50 30 20 100 70 t j = 25 c i c = 5.0 a i c = 15 a i c = 10 a 0.1 0.7 1.0 2.0 3.0 5.0 10 7.0 50 30 20 0.2 0.3 0.5 t j = 25 c v be(sat) @ i c /i b = 100 v be @ v ce = 5.0 v v ce(sat) @ i c /i b = 100
mj11021(pnp) mj11022 (npn) http://onsemi.com 5 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. all rules and notes associated with referenced to-204aa outline shall apply. dim min max min max millimeters inches a 1.550 ref 39.37 ref b --- 1.050 --- 26.67 c 0.250 0.335 6.35 8.51 d 0.038 0.043 0.97 1.09 e 0.055 0.070 1.40 1.77 g 0.430 bsc 10.92 bsc h 0.215 bsc 5.46 bsc k 0.440 0.480 11.18 12.19 l 0.665 bsc 16.89 bsc n --- 0.830 --- 21.08 q 0.151 0.165 3.84 4.19 u 1.187 bsc 30.15 bsc v 0.131 0.188 3.33 4.77 a n e c k ? t ? seating plane 2 pl d m q m 0.13 (0.005) y m t m y m 0.13 (0.005) t ? q ? ? y ? 2 1 u l g b v h to ? 204 (to ? 3) case 1 ? 07 issue z style 1: pin 1. base 2. emitter case: collector on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 mj11021/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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